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PESDXS1UB series
ESD protection diodes in SOD523 package
Rev. 02 -- 24 August 2009 Product data sheet
1. Product profile
1.1 General description
Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and other transients.
1.2 Features
I I I I I I I Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 s Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 s
1.3 Applications
I I I I I Computers and peripherals Communication systems Audio and video equipment Data lines CAN bus protection
1.4 Quick reference data
Table 1. Symbol VRWM Quick reference data Parameter reverse standoff voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB 3.3 5 12 15 24 V V V V V Conditions Value Unit
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
Quick reference data ...continued Parameter diode capacitance PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB number of protected lines Conditions VR = 0 V; f = 1 MHz 207 152 38 32 23 1 pF pF pF pF pF Value Unit
Table 1. Symbol Cd
2. Pinning information
Table 2. Pin 1 2 Discrete pinning Description cathode anode
[1]
Simplified outline
Symbol
1 2
sym035
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3. Ordering information Package Name PESDXS1UB SC -79 Description plastic surface mounted package; 2 leads Version SOD523 Type number
4. Marking
Table 4. Marking Marking code N1 N2 N3 N4 N5 Type number PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
2 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB IPP peak pulse current PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB Tj Tamb Tstg
[1]
Conditions 8/20 s
[1]
Min -
Max 330 260 180 160 160 18 15 5 5 3 150 +150 +150
Unit W W W W W A A A A A C C C
8/20 s
[1]
-65 -65
junction temperature operating ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponentially decay waveform; see Figure 1.
Table 6. Symbol ESD
ESD maximum ratings Parameter electrostatic discharge capability PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB PESDXS1UB series HBM MIL-STD883 Conditions IEC 61000-4-2 (contact discharge)
[1]
Min
Max
Unit
-
30 30 30 30 23 10
kV kV kV kV kV kV
[1]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 7. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2, level 4 (ESD) HBM MIL-STD883, class 3
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
3 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
4 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
6. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified Symbol VRWM Parameter reverse standoff voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB IRM reverse leakage current PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB VBR breakdown voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB Cd diode capacitance PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB V(CL)R clamping voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB IPP = 1 A IPP = 18 A IPP = 1 A IPP = 15 A IPP = 1 A IPP = 5A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A
[1]
Conditions
Min -
Typ 0.7 0.1 <1 <1 <1 5.6 6.8 15.0 18.0 27.0
Max 3.3 5 12 15 24 2 1 50 50 50 6.0 7.2 15.3 18.4 27.5
Unit V V V V V A A nA nA nA V V V V V
see Figure 7 VRWM = 3.3 V VRWM = 5 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IR = 5 mA 5.2 6.4 14.7 17.6 26.5 VR = 0 V; f = 1 MHz; see Figure 5 and 6 207 152 38 32 23 300 200 75 70 50 7 20 9 20 19 35 23 40 36 70 pF pF pF pF pF V V V V V V V V V V -
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
5 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
Table 8. Characteristics ...continued Tamb = 25 C unless otherwise specified Symbol Rdiff Parameter differential resistance PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB
[1]
Conditions IR = 1 mA IR = 1 mA IR = 1 mA IR = 1 mA IR = 0.5 mA
Min -
Typ -
Max 400 80 200 225 300
Unit
Non-repetitive current pulse 8/20 s exponentially decay waveform; see Figure 1.
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
6 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
104 Ppp (W) 103
001aaa147
1.2 PPP PPP(25C) 0.8
001aaa193
(1)
102
(2)
0.4
10 1 10
102
103 tp (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C tp = 8/20 s exponentially decay waveform, see Figure 1 (1) PESD3V3S1UB and PESD5V0S1UB (2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB
Fig 3.
Peak pulse power dissipation as a function of pulse time; typical values
Fig 4.
Relative variation of peak pulse power as a function of junction temperature; typical values
50
001aaa149
240 Cd (pF) 200
001aaa148
Cd (pF) 40
160
(1)
30
120
(2)
20
(1) (2)
80
10
(3)
40 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
f = 1 MHz; Tamb = 25 C (1) PESD3V3S1UB (2) PESD5V0S1UB
f = 1 MHz; Tamb = 25 C (1) PESD12VS1UB (2) PESD15VS1UB (3) PESD24VS1UB
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
Fig 6.
Diode capacitance as a function of reverse voltage; typical values
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
7 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
10
001aaa270
IR IR(25C)
(1)
1
10-1 -100
-50
0
50
100 Tj (C)
150
(1) PESD3V3S1UB; VRWM = 3.3 V PESD5V0S1UB; VRWM = 5 V IR is less than 10 nA at 150 C for: PESD12VS1UB; VRWM = 12 V PESD15VS1UB; VRWM = 15 V PESD24VS1UB; VRWM = 24 V
Fig 7.
Relative variation of reverse leakage current as a function of junction temperature; typical values
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
8 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
ESD TESTER RZ CZ 1 D.U.T.: PESDXS1UB
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
IEC 61000-4-2 network CZ = 150 pF; RZ = 330 2
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS1UB
GND GND GND GND GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
PESD15VS1UB
PESD12VS1UB
PESD5V0S1UB
PESD3V3S1UB
clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
006aaa001
Fig 8.
ESD clamping test setup and waveforms
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
9 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
7. Application information
The PESDXS1UB series is designed for unidirectional protection of one single data line from the damage caused by ESD (ElectroStatic Discharge) and Surge Pulses. The PESDXS1UB series may be used on lines where the signal polarity is above or below ground. The PESDXS1UB series provides a surge capability of up to 330 Watts per line for a 8/20 s waveform.
line to be protected (positive signal polarity)
line to be protected (negative signal polarity)
PESDXS1UB
PESDXS1UB
ground
ground
uni-directional protection of one line
006aaa002
Fig 9.
Unidirectional protection of one line
Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, EFT and Surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protection conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias.
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
10 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
8. Package outline
Plastic surface-mounted package; 2 leads SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1
(1)
Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16
Fig 10. Package outline
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
11 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
9. Packing information
Table 9. Possible packing methods The indicated -xxx are the last three digits of the 12 NC ordering code.[1] Type number PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB
[1]
Package SOD523 SOD523 SOD523 SOD523 SOD523
Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 -115 -115 -115 -115 10000 -135 -135 -135 -135 -135
For further information see Section 12.
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
12 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
10. Revision history
Table 10. Revision history Release date Data sheet status Product data Change notice Supersedes PESDXS1UB_SERIES_1 Document ID Modifications:
PESDXS1UB_SERIES_2 20090824
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 10 "Package outline": updated Product data -
PESDXS1UB_SERIES_1 20040614
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
13 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXS1UB_SERIES_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 24 August 2009
14 of 15
NXP Semiconductors
PESDXS1UB series
ESD protection diodes in SOD523 package
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 August 2009 Document identifier: PESDXS1UB_SERIES_2

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